This year, the export control of 镓 and 锗 related objects triggered multiple daily limit, and the fourth-generation semiconductor development was initially exposed.
Public information shows that 镓 and 锗 are all emerging strategic key minerals and have been included in the national strategic mineral list.Both metal minerals have a leading position worldwide in terms of reserves or exports.In 2022, the export of products in my country increased significantly.According to data from the General Administration of Customs, from January to November 2022, my country ’s cumulative export 镓 products were 89.35 tons, an increase of 44.1%over the same period in 2021.
Recently, the vigorous demand of new energy vehicles has led to the development of domestic third -generation semiconductors.Right now, the front of the silicon carbide power device is not allowed.In the "window period" of the shortage of shortage in the next two or three years, the domestic silicon carbide (SIC) industry has entered the development expressway.The same as the third -generation semiconductor Nitrogen (GAN) (GAN) reaches 3.4EV due to its banned bandwidth, a wider forbidden bandwidth, a higher breakdown electric field, a higher thermal conductivity, a higher electronic saturation rateAnd better radiation resistance, so that it is expected to surpass silicon carbide to achieve better performance in the field of power devices, radio frequency devices, and optoelectric components.
The U.S. military even relies on the characteristics of nitride to effectively transmit the most advanced radar in development.Nitride is also used for alternatives of the Patriot missile defense system that RTX is being manufactured.
As the third -generation semiconductor development is in the ascendant, the development of the fourth -generation semiconductor material has also made breakthrough progress.
01 Fourth-generation semiconductor dispute
The fourth-generation semiconductorAlthough this concept has not been well known by the public, it has attracted widespread attention and heated discussion in academia and industry.Compared with the first three generations of semiconductors, the fourth -generation semiconductor not only achieves breakthroughs in the type of material, but also achieves a quality leap in performance. With unique physical and chemical properties, it provides new ideas and for solving many challenges facing the current semiconductor technology.Solution.
On August 12, the Ministry of Commerce Industry and Security (BIS) issued an announcement, saying that for national security considerations, four "emerging and basic technologies" were included in new exportscontrol.These four technologies are: the fourth -generation semiconductor material oxidation and diamonds that can withstand high temperature and high voltage; ECAD software specifically used for 3nm and below chip design; and the pressure gain technology for rockets and hypersonic systems.
In addition to the United States, the Japanese economy industry has long provided financial support for the development of private enterprises and universities that are committed to developing a new generation of semiconductor materials "oxidation".US $ 20.3 million in support funds, and expected that the investment in the next five years will exceed $ 85.6 million.Japans economy industry believes that Japanese companies will be able to start the oxidized semiconductor -based semiconductor -based semiconductor for data centers, home appliances and automobiles in the late 1920s.Once the oxidation is replaced by the current widely used silicon material, the discharge of carbon dioxide by 14.4 million tons of carbon dioxide is reduced each year.
Hao Yue, an academician of the Chinese Academy of Sciences, said that oxidation materials are one of the most likely to be shined in the future. In the next 10 years, oxidation devices may become competitiveElectric electronics will compete directly with silicon carbide devices.
What development prospects does it have?
02 Core advantage of the fourth-generation semiconductor
The fourth generationSemiconductors include ultra -wide procedure semiconductors and ultra -narrow forbidden band semiconductors.Judging from the maturity of technological development in a certain period of time, oxidation (GA2O3) is the fourth -generation semiconductor material from laboratory to factories in the next few years.Some industrial institutions in my country believe that as the fourth -generation semiconductor material, it is most likely to quickly solve the oxidation of industrialized technology bottlenecks. It is expected to completely replace the silicon carbide and nitride market in the next 10 years, and has become our advantage in the semiconductor field of chip.
Comparison of theoretical and physical properties of silicon carbide, nitride and oxidation, can be found that oxidation and third -generation semiconductors are no longer a "relative advantage" complementary relationship, but instead, but instead, but instead, they areIt is expected to replace silicon carbide and nitride in the future with the advantages of "ultra-broadband gap (4.2-4.9EV)", "ultra-high critical breakdown field (8mv/cm)" and "super transparent conductivity".
In simple terms, a wider forbidden band width means that electrons need more energy to transition from the price band to the guide zone, and under the same specificationSmaller, higher power density devices, save supporting heat dissipation and wafer area.Oxidation is much larger than the width of the banned band of silicon carbide and nitride. Under the conditions of the industrialization of the same technology, the oxide device is more resistant to high pressure, high temperature resistance, high power, anti -radiation, and low cost.From a cost perspective, 60%of the current cost of producing oxidation comes from the rare metal tadpoles required in the production process.
Oxidation 镓 VS. Silicon Carbide — Comparison Source: How much Will Gallium Oxide Power Electronics Cost?
p ID = "35N65EOQ"> Application fieldThe fourth -generation semiconductor is gradually leading scientific and technological progress and industry with its unique performance and extensive application prospects.develop.
• Electronics and Communication
In the field of electronic communication, the fourth -generation semiconductor has its excellent performance and performance and performance andThe advantage of energy efficiency is an important force to promote the progress of the industry.Ultra -wide regulatory semiconductor (such as diamond and oxidation) is unique in high -speed electronic applications such as high -frequency communication and satellite communication.The fourth -generation semiconductor can significantly improve the transmission speed and signal processing capacity of electronic devices, and provide technical guarantee for the construction of more efficient and stable communication networks.At the same time, ultra -narrow forbidden band semiconductors such as 锑 物 锑 同时 同时 同时 同时 同时 and infrared sensing are also brought to new development opportunities to the fields of optical communication and optical fiber sensing.
• New Energy
The field of new energy is another major direction of the fourth -generation semiconductor application.With the continuous growth of global demand for renewable energy, the development of power electronic devices and energy storage systems has become the key.The fourth -generation semiconductor has a important position in the fields of electric electronic converters, smart grids, and electric vehicles with its high energy ratio and high temperature resistance.The fourth -generation semiconductor can greatly improve the efficiency of energy conversion and reduce the loss of sources, which is expected to promote a comprehensive application of renewable energy.In addition, new solar batteries and photoelectric catalytic materials based on fourth -generation semiconductors are also continuously exploring, which is expected to bring new breakthroughs to solar energy use and hydrogen energy production.
• Smart wearable and flexible electronics
With the rapid development of the Internet of Things and wearable technology, smart devicesThe market demand for flexible electronic products is increasing.Flexible electronic devices based on two -dimensional materials are smart bracelets, smart watches, implanted medical equipment and other products to introduce a more comfortable and convenient experience experience.At the same time, these materials also have excellent biocompatibility and sensing performance, laying the foundation for innovative applications in the fields of medical monitoring and health management.
03 Semiconductor Materials Domestic Materials Land
The Ministry of Science and Technology of my country was 2022 in 2022 In the year, the oxidation of oxidation is included in the "Fourteen Five -Year Plan for R & D Plan". It must be obtained.
In February this year, 46 China Electric Sciences official Strive the practical process of my countrys oxidation materials and the development of related industries.
In addition, Xian University of Posts and Telecommunications announced that it has made a breakthrough in the semiconductor material field.This marks important progress in the study of ultra -wide procedure semiconductor.
On October 30th, Shenzhen Pinghu Lab has achieved important progress in the theoretical research of oxidation.带 oxygen three -yuan wide controlband semiconductor.
It is understood that this achievement is mainly aimed at solving problems such as low energy levels of oxidation bands and difficulty in P-type doping difficulties.In addition, the result "Rhodium-AlLoyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors" has been published in "Advanced Electronic Materials" and was invited Journal cover design.The article is also included in the topic of "Progress and Frontiers in Ultrawide Bandgap Semiconductors".The first author of the article is Dr. Zha Xiancai, the author of the communications is Academician Zhang Daohua, and the co -authors include Director Wan Yuxi and Associate Professor Li Shuang.
In terms of enterprises, many domestic manufacturers also lay out early on the fourth -generation semiconductor.For example, Huaxin Crystal .On the basis of the second and third -generation semiconductor compound business such as the existing phosphorus, silicon carbide, etc. in 2021, Huaxin Electric has launched the research and development of the fourth -generation semiconductor compound oxidation single crystal substrate.Focusing on high -quality, low defects, high processing accuracy, and high transmission rate, Huaxin Crystal has conducted in -depth research, which has been related to the growth of oxide crystal growth, low density defect control of low crystal, and high -efficiency element doping. At presentThe 2 -inch oxidation of the crystal growth rate and low density defect control have reached the international level.
On October 29th, Hangzhou Hangren Semiconductor Co., Ltd. has made significant progress in the growth technology of oxidation.The second -generation casting method has grown up the super -thick 6 -inch oxidation single crystal, and the thickness of the crystal ingot can reach more than 20mm.It is understood that the thickness of the single crystal ingot under the same diameter reaches the international leader, which is 2-3 times that of the thickness of the modeling method (EFG) ingot.At the same time, combined with the ultra-thin substrate machining technology of the bearer semiconductor, the amount of a single crystal ingot can reach the original 3-4 times, and the cost of the single piece can be reduced by more than 70%compared to the original.In addition, increasing the thickness of the oxide monocrystalline ingot, which is more conducive to preparing a large -sized substrate (6 -inch 4 degrees oblique cutting requires about 12mm thick crystal ingots) to meet the downstream different extension and device linkSpecial needs.
On October 29th, Hangzhou Fugiaye Technology Co., Ltd. announced that its oxidation outer extension film completed the MOSFET horizontal power device verification.
It is understood that Fuguye uses the molecular beam extension technology (MBE) to develop high -performance oxidative outer outer latter products, using non -intentional doping layer and SN doped layer to compoundThe double -layer extension structure, the substrate material is a semi -extension (010) FE doped oxidation, mainly used in horizontal power devices.The concentration of the mixed layer of conventional products is 1-4E17cm-3, the migration rate is> 80 cm2/v · s, and the surface roughness is
