IT House November 14th news, according to Korean media ETNEWS, Samsung Electronics, SK Hynix, and Micron are all embracedInterested, technical preparation is being prepared.
SK Hynix has previously announced the 16 -layer stack HBM3E, and from the overall point of view, HBM memory will be officially turned to 16 layers of stacks in HBM4 as a whole.Because the mixed bonding technology of non -convex block is not yet mature, the traditional bump plan is expected to be the mainstream bonding technology of the HBM4 16Hi.
More DRAM DIE layers means that HBM4 16Hi needs to further compress the interval layer to ensure that the overall stack height is maintained at 775 μm (IT of ITHome Note: That is, 0.775 mm) restrictions.
In this context, the three major memory of the three major memory noticed that the existing HBM key combination technology used: The welding agent can clean up the oxidation layer on the DRAM DIE surface to ensure that the mechanical and electrical connection during the key combination will not be affected by the oxidation layer; howeverStrong> increase the overall stack height.
Sources said that the three major HBM memory originals have different preparations for helpless welding bonds: Micron is the most positive in terms of testing technology with partners, SK Hylos is considered importing, SK Hylos is introduced,Samsung Electronics also pays close attention to this.
